Display device

ABSTRACT

A display device includes a substrate, a display area located over the substrate and including a plurality of pixels, a non-display area arranged outside the display area, a first power voltage line corresponding to one side of the display area in the non-display area and including a first conductive layer and a second conductive layer arranged over the first conductive layer, a second power voltage line spaced apart from the first power voltage line in the non-display area, a first dam unit surrounding the display area and overlapping the second power voltage line in a plan view, a second dam unit arranged outside the first dam unit, and a third dam unit arranged between the display area and the first dam unit and overlapping the first conductive layer and the second conductive layer of the first power voltage line in the plan view.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No.10-2018-0106749, filed on Sep. 6, 2018, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND 1. Field

One or more exemplary embodiments relate to a display device, and moreparticularly, to a display device that implements high quality whilereducing an area of a dead space of the display device.

2. Description of the Related Art

A display device is a device that visually displays data. Recently, thepurposes of a display device have become more diversified. Also, as adisplay device is thin and lightweight, a range of use thereof hasgradually been extended.

The display device includes a substrate divided into a display area anda non-display area outside the display area. The non-display area inwhich non-display elements such as a pad unit, a plurality of wirings,and a driving circuit unit are arranged is a dead space which does notimplement an image. Recently, the demand for reducing the dead space ofa display device has increased.

SUMMARY

One or more exemplary embodiments include a display device and amanufacturing method thereof that reduce a dead space and provide ahigh-quality image. However, it should be understood that exemplaryembodiments described herein should be considered in a descriptive senseonly and not for limitation of the disclosure.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented exemplary embodiments.

According to one or more exemplary embodiments, a display deviceincludes a substrate; a display area located over the substrate andwhich includes a plurality of pixels, a non-display area arrangedoutside the display area, a first power voltage line which correspondsto one side of the display area in the non-display area and includes afirst conductive layer and a second conductive layer arranged over thefirst conductive layer, a second power voltage line spaced apart fromthe first power voltage line in the non-display area, a first dam unitwhich surrounds the display area and overlaps the second power voltageline in a plan view, a second dam unit arranged outside the first damunit, and a third dam unit arranged between the display area and thefirst dam unit and which overlaps the first conductive layer and thesecond conductive layer of the first power voltage line in a plan view.

In an exemplary embodiment, the display device may further include afirst planarization layer arranged in the display area and thenon-display area, a second planarization layer arranged over the firstplanarization layer, and a pixel-defining layer arranged over the secondplanarization layer, where the third dam unit may include at least oneof the pixel-defining layer and the second planarization layer.

In an exemplary embodiment, a step difference may be provided in a topsurface of an upper layer among the pixel-defining layer and the secondplanarization layer.

In an exemplary embodiment, a bottom layer among the pixel-defininglayer and the second planarization layer may clad an end of the secondconductive layer.

In an exemplary embodiment, the upper layer among the pixel-defininglayer and the second planarization layer may clad an end of the bottomlayer.

In an exemplary embodiment, each of the pixels may include a firstelectrode, an emission layer arranged on the first electrode, and asecond electrode arranged on the emission layer, and the secondelectrode may be arranged in common in the plurality of pixels and mayextend to the non-display area to cover a portion of the third dam unit.

In an exemplary embodiment, the display device may further include athin-film encapsulation layer which includes a first inorganicencapsulation layer that covers the display area, an organicencapsulation layer on the first inorganic encapsulation layer, and asecond inorganic encapsulation layer on the organic encapsulation layer,and the thin-film encapsulation layer may cover the third dam unit.

In an exemplary embodiment, the first inorganic encapsulation layer maydirectly contact the second inorganic encapsulation layer at the outsideof the second dam unit.

In an exemplary embodiment, a width of the second conductive layer maybe less than a width of the first conductive layer.

In an exemplary embodiment, the second conductive layer may be providedin plural and the second conductive layers may be spaced apart from eachother over the first conductive layer, and the third dam unit may clad,with an insulating layer, each of the plurality of second conductivelayers spaced apart from each other to constitute a plurality of sub-damunits.

In an exemplary embodiment, an insulating layer may be arranged betweenthe first conductive layer and the second conductive layer, and thefirst conductive layer may be electrically connected with the secondconductive layer through a contact hole defined by the insulating layer.

In an exemplary embodiment, the second power voltage line may include athird conductive layer and a fourth conductive layer arranged on thethird conductive layer.

In an exemplary embodiment, an insulating layer may be arranged betweenthe third conductive layer and the fourth conductive layer, and thethird conductive layer may be electrically connected with the fourthconductive layer through a contact hole defined by the insulating layer.

In an exemplary embodiment, the first dam unit or the second dam unitmay clad an end of the fourth conductive layer.

In an exemplary embodiment, the third conductive layer may include asame material as the first conductive layer, and the fourth conductivelayer may include a same material as the second conductive layer.

In an exemplary embodiment, a width of the fourth conductive layer maybe greater than a width of the second conductive layer.

In an exemplary embodiment, a plurality of wirings spaced apart fromeach other may be disposed between the substrate and the firstconductive layer and between the substrate and the third conductivelayer in a direction that crosses the first conductive layer and thethird conductive layer.

In an exemplary embodiment, the display device may further include afirst planarization layer arranged in the display area and thenon-display area, a second planarization layer arranged over the firstplanarization layer and a pixel-defining layer arranged over the secondplanarization layer, where the first dam unit and the second dam unitmay include at least one of the first planarization layer and the secondplanarization layer.

In an exemplary embodiment, a height of the second dam unit may begreater than a height of the first dam unit.

According to one or more exemplary embodiments, a display deviceincludes a display area including a plurality of display elements, anon-display area arranged outside the display area, a terminal unitarranged at an end of the non-display area, a first power voltage linearranged between the display area and the terminal unit and whichincludes a first conductive layer and a second conductive layer arrangedon the first conductive layer, a second power voltage line spaced apartfrom the first power voltage line and which includes a third conductivelayer and a fourth conductive layer arranged on the third conductivelayer, a first dam unit which overlaps the second power voltage line ina plan view, a second dam unit arranged outside the first dam unit, athird dam unit arranged between the display area and the first dam unitand which overlaps the first conductive layer and the second conductivelayer of the first power voltage line in the plan view, and a thin-filmencapsulation layer which includes a first inorganic encapsulation layercovering the display area and the third dam unit, an organicencapsulation layer on the first inorganic encapsulation layer, and asecond inorganic encapsulation layer on the organic encapsulation layer.

In an exemplary embodiment, the display device may further include afirst planarization layer arranged in the display area and thenon-display area, a second planarization layer arranged over the firstplanarization layer and a pixel-defining layer arranged over the secondplanarization layer, where the third dam unit may include at least oneof the pixel-defining layer and the second planarization layer.

In an exemplary embodiment, a plurality of wirings spaced apart fromeach other may be disposed between the substrate and the firstconductive layer and between the substrate and the third conductivelayer in a direction that faces the terminal unit.

In an exemplary embodiment, the third conductive layer may include asame material as the first conductive layer, and the fourth conductivelayer may include a same material as the second conductive layer.

In an exemplary embodiment, the display device may further include athin film transistor, and the first to third dam units may include aninsulating layer pattern including a same material as an insulatinglayer arranged between the thin film transistor and the display element.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the exemplary embodiments,taken in conjunction with the accompanying drawings in which:

FIG. 1 is a plan view of a display device according to an exemplaryembodiment;

FIGS. 2A and 2B are equivalent circuit diagrams of one of the pixelsincluded in a display device according to an exemplary embodiment;

FIG. 3 is a cross-sectional view of one of the pixels included in adisplay device, taken along line IIIA-IIIB of FIG. 1, according to anexemplary embodiment;

FIG. 4 is a cross-sectional view of one of the pixels taken along linesIIIA-IIIB and IVA-IVB of FIG. 1;

FIG. 5 is a cross-sectional view of a display device according toanother exemplary embodiment;

FIG. 6 is a cross-sectional view of a display device according to stillanother exemplary embodiment; and

FIGS. 7 and 8 are cross-sectional views of an exemplary embodiment inwhich a step difference is provided in a top surface of a third damunit.

DETAILED DESCRIPTION

As the disclosure allows for various changes and numerous exemplaryembodiments, example embodiments will be illustrated in the drawings anddescribed in detail in the written description. An effect and acharacteristic of the disclosure, and a method of accomplishing thesewill be apparent when referring to exemplary embodiments described withreference to the drawings. This disclosure may, however, be embodied inmany different forms and should not be construed as limited to theexample embodiments set forth herein.

Hereinafter, the disclosure will be described more fully with referenceto the accompanying drawings, in which example embodiments of thedisclosure are shown. When a description is made with reference to thedrawings, like reference numerals in the drawings denote like orcorresponding elements, and repeated description thereof will beomitted.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

Expressions such as “at least one of” when preceding a list of elements,modify the entire list of elements and do not modify the individualelements of the list.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises/includes” and/or“comprising/including” used herein specify the presence of statedfeatures or components, but do not preclude the presence or addition ofone or more other features or components.

It will be understood that when a layer, region, or component isreferred to as being “on” or “over” another layer, region, or component,it can be directly or indirectly disposed on or over the other layer,region, or component. That is, for example, intervening layers, regions,or components may be present.

Sizes of components in the drawings may be exaggerated for convenienceof explanation. In other words, since sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof explanation, the following exemplary embodiments are not limitedthereto.

When a certain exemplary embodiment may be implemented differently, aspecific process order may be performed differently from the describedorder. For example, two consecutively described processes may beperformed substantially at the same time or performed in an orderopposite to the described order.

It will be understood that when a layer, region, or component isreferred to as being “connected” to another layer, region, or component,it may be “directly connected” to the other layer, region, or componentor may be “indirectly connected” to the other layer, region, orcomponent with other layer, region, or component interposedtherebetween. For example, it will be understood that when a layer,region, or component is referred to as being “connected to orelectrically connected” to another layer, region, or component, it maybe “directly electrically connected” to the other layer, region, orcomponent or may be “indirectly connected or electrically connected” toother layer, region, or component with other layer, region, or componentinterposed therebetween.

In the following examples, the x-axis, the y-axis and the z-axis are notlimited to three axes of the rectangular coordinate system, and may beinterpreted in a broader sense. For example, the x-axis, the y-axis, andthe z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

A display device is a device that displays an image and may be a liquidcrystal display, an electrophoretic display, an organic light-emittingdisplay, an inorganic light-emitting display, a field emission display,a surface-conduction electron-emitter display, a plasma display, acathode ray display, etc.

Hereinafter, though an organic light-emitting display device isexemplarily described as the display device according to an exemplaryembodiment, the display device is not limited thereto and the displaydevice may be various other display devices.

FIG. 1 is a plan view of a display device 1 according to an exemplaryembodiment, FIGS. 2A and 2B are equivalent circuit diagrams of one ofthe pixels included in a display device according to an exemplaryembodiment, FIG. 3 is a cross-sectional view of one of the pixelsincluded in the display device 1, taken along line IIIA-IIIB of FIG. 1,according to an exemplary embodiment, and FIG. 4 is a cross-sectionalview of one of the pixels taken along lines IIIA-IIIB and IVA-IVB ofFIG. 1.

Referring to FIG. 1, the display device 1 includes a display unit 1DAarranged on a substrate 100. The display unit 1DA includes pixels Pconnected to a data line DL that extends in a first direction and a scanline SL that extends in a second direction crossing the first direction.Each pixel P may be connected with a driving voltage line PL thatextends in the first direction.

One pixel P may emit, for example, red, green, blue, or white light andmay include, for example, an organic light-emitting diode (“OLED”).Also, each pixel P may further include an element such as a thin filmtransistor and a capacitor.

The display unit 1DA provides a predetermined image by using lightemitted from the pixels P and defines a display area DA. A non-displayarea NDA is arranged outside the display area DA. For example, thenon-display area NDA may surround the display area DA.

The non-display area NDA is an area in which pixels are not arranged andthus does not provide an image. A first power voltage line 10 and asecond power voltage line 20, which different voltages, may be arrangedin the non-display area NDA.

The first power voltage line 10 may include a first main voltage line 11and a first connection line 12. Each of the first main voltage line 11and the first connection line 12 is arranged on one side of the displayarea DA. For example, in the case where the display area DA has arectangular shape, the first main voltage line 11 may be arranged tocorrespond to one of the sides of the display area DA. The firstconnection line 12 extends from the first main voltage line 11 in afirst direction. Here, the first direction may be understood as adirection from the display area DA to a terminal unit 30 located near anedge of the substrate 100. The first connection line 12 may be connectedwith a first terminal 32 of the terminal unit 30.

The second power voltage line 20 may include a second main voltage line21 that surrounds two opposite ends of the first main voltage line 11and portions of the display area DA, and a second connection line 22that extends from the second main voltage line 21 in the firstdirection. For example, in the case where the display area DA has arectangular shape, the second main voltage line 21 may extend along twoopposite ends of the first main voltage line 11 and the rest of thesides except the side of the display area DA that is adjacent to thefirst main voltage line 11. The second connection line 22 may extend inthe first direction in parallel to the first connection line 12 and maybe connected with a second terminal 33 of the terminal unit 30. Thesecond power voltage line 20 may be bent to surround the opposite endsof the first main voltage line 11.

The terminal unit 30 is arranged at one end of the substrate 100 andincludes a plurality of terminals 31, 32, and 33. The terminal unit 30is not covered by an insulating layer and is exposed and thus may beelectrically connected with a flexible printed circuit board or acontroller (not shown) such as a driving driver IC chip.

The controller changes a plurality of image signals transferred from theoutside to a plurality of image data signals and transfers the imagedata signals to the display area DA through the third terminal 31. Also,the controller may receive a vertical synchronization signal, ahorizontal synchronization signal, and a clock signal, generate controlsignals to control driving of first and second gate drivers (not shown),and transfer the control signals to the first and second gate drivers,respectively, through a terminal (not shown).

The controller may transfer different voltages to the first powervoltage line 10 and the second power voltage line 20 through the firstterminal 32 and the second terminal 33, respectively.

The first power voltage line 10 may provide a first power voltage ELVDD(see FIGS. 2A and 2B) to each pixel P, and the second power voltage line20 may provide a second power voltage ELVSS (see FIGS. 2A and 2B) toeach pixel P.

For example, the first power voltage ELVDD (see FIGS. 2A and 2B) may beprovided to each pixel P through the driving voltage line PL connectedwith the first power voltage line 10. The second power voltage ELVSS(see FIGS. 2A and 2B) is provided to a cathode of an organiclight-emitting diode OLED (see FIGS. 2A and 2B) of each pixel P. In thiscase, the second main voltage line 21 of the second power voltage line20 may be connected with the cathode of the organic light-emitting diodeOLED (see FIGS. 2A and 2B) in the non-display area NDA.

Though not shown, a scan driver configured to provide a scan signal to ascan line SL of each pixel P, a data driver configured to provide a datasignal to a data line DL, etc. may be arranged in the non-display areaNDA.

A first dam unit 110 and a second dam unit 120 may be spaced apart fromeach other in the non-display area NDA. Each of the first dam unit 110and the second dam unit 120 surrounds the display area DA.

The first dam unit 110 and the second dam unit 120 serve as damsconfigured to block flowing of an organic material into an edge of thesubstrate 100 while an organic encapsulation layer 420 (see FIGS. 3 and4) including the organic material and constituting a thin-filmencapsulation layer 400 (see FIGS. 3 and 4) is formed, and thus preventan edge tail of the organic encapsulation layer 420 from being formed atthe edge of the substrate 100.

The first dam unit 110 and the second dam unit 120 may overlap thesecond power voltage line 20 in the plan view. Therefore, heights of thefirst dam unit 110 and the second dam unit 120 may be raised by heightsof a third conductive layer 20 a (see FIG. 4) and a fourth conductivelayer 20 b (see FIG. 4) that constitute the second power voltage line20.

A case where the organic encapsulation layer 420 flows to the edge ofthe substrate 100 beyond the first dam unit 110 and the second dam unit120 despite the arrangement of the first dam unit 110 and the second damunit 120 may occur. For example, in the case where the second dam unit120 is arranged closer to the first dam unit 110 from the edge of thesubstrate 100 so as to reduce an area recognized as a dead space (i.e.,area which does not implement an image) from a viewer of the outside, orthe first dam unit 110 is arranged closer to the second dam unit 120 soas to increase the display area DA of the display unit 1DA, an intervalbetween the first dam unit 110 and the second dam unit 120 may bereduced and thus the organic encapsulation layer 420 may flow beyond thesecond dam unit 120 to the edge of the substrate 100. The edge tailformed by the overflow of the organic material may serve as atransmission path of external impurities and thus may cause a defect ofthe organic light-emitting diode OLED.

In the present exemplary embodiment, since a third dam unit 130 isarranged between the display unit 1DA and the first dam unit 110 suchthat the third dam unit 130 overlaps the first power voltage line 10 inthe plan view, a reflow velocity of the organic material may be reduced.Therefore, the edge tail of the organic material may be effectivelyprevented.

The third dam unit 130 may overlap the first power voltage line 10.Therefore, a height of the third dam unit 130 may be raised by heightsof a first conductive layer 10 a (see FIG. 4) and a second conductivelayer 10 b (see FIG. 4) that constitute the first power voltage line 10.

Referring to FIG. 2A, in an exemplary embodiment, each pixel P includesa pixel circuit PC connected to the scan line SL and the data line DL,and the organic light-emitting diode OLED connected to the pixel circuitPC.

The pixel circuit PC includes a driving thin film transistor T1, aswitching thin film transistor T2, and a storage capacitor Cst. Theswitching thin film transistor T2 is connected to the scan line SL andthe data line DL and transfers a data signal Dm input through the dataline DL to the driving thin film transistor T1 in response to a scansignal Sn input through the scan line SL.

The storage capacitor Cst is connected to the switching thin filmtransistor T2 and the driving voltage line PL and stores a voltagecorresponding to a difference between a voltage transferred from theswitching thin film transistor T2 and the first power voltage ELVDD (ora driving voltage) supplied to the driving voltage line PL.

The driving thin film transistor T1 is connected to the driving voltageline PL and the storage capacitor Cst and may control a driving currentflowing through the organic light-emitting diode OLED from the drivingvoltage line PL in response to a voltage value stored in the storagecapacitor Cst. The organic light-emitting diode OLED may emit lighthaving predetermined brightness by using the driving current.

Though FIG. 2A shows the case where the pixel circuit PC includes twothin film transistors and one storage capacitor, the invention is notlimited thereto.

Referring to FIG. 2B, in another exemplary embodiment, the pixel circuitPC may include the driving and switching thin film transistors T1 andT2, a compensation thin film transistor T3, a first initialization thinfilm transistor T4, a first emission control thin film transistor T5, asecond emission control thin film transistor T6, and a secondinitialization thin film transistor T7.

Though FIG. 2B shows that each pixel P includes signal lines SLn, SLn-1,EL, and DL, an initialization voltage line VL, and a driving voltageline PL, the invention is not limited thereto. In another exemplaryembodiment, at least one of the signal lines SLn, SLn-1, EL, and DL,and/or the initialization voltage line VL may be shared by adjacentpixels.

A drain electrode of the driving thin film transistor T1 may beelectrically connected with the organic light-emitting diode OLED viathe second emission control thin film transistor T6. The driving thinfilm transistor T1 receives a data signal Dm in response to a switchingoperation of the switching thin film transistor T2 and transfers thedriving current to the organic light-emitting diode OLED.

A gate electrode of the switching thin film transistor T2 is connectedwith the first scan line SL, and a source electrode of the switchingthin film transistor T2 is connected to the data line DL. A drainelectrode of the switching thin film transistor T2 may be connected witha source electrode of the driving thin film transistor T1 and connectedwith the driving voltage line PL via the first emission control thinfilm transistor T5.

The switching thin film transistor T2 is turned on in response to afirst scan signal Sn transferred through the first scan line SLn andperforms a switching operation of transferring a data signal Dmtransferred through the data line DL to the source electrode of thedriving thin film transistor T1.

A gate electrode of the compensation thin film transistor T3 may beconnected to the first scan line SLn. A source electrode of thecompensation thin film transistor T3 may be connected with the drainelectrode of the driving thin film transistor T1 and connected with apixel electrode of the organic light-emitting diode OLED via the secondemission control thin film transistor T6. A drain electrode of thecompensation thin film transistor T3 may be connected with one of theelectrodes of the storage capacitor Cst, a source electrode of the firstinitialization thin film transistor T4, and the gate electrode of thedriving thin film transistor T1. The compensation thin film transistorT3 is turned on in response to the first scan signal Sn transferredthrough the first scan line SLn and diode-connects the driving thin filmtransistor T1 by connecting the gate electrode of the driving thin filmtransistor T1 with the drain electrode of the driving thin filmtransistor T1.

A gate electrode of the first initialization thin film transistor T4 maybe connected with a second scan line SLn-1 (also referred to as aprevious scan line). A drain electrode of the first initialization thinfilm transistor T4 may be connected with the initialization voltage lineVL. The source electrode of the first initialization thin filmtransistor T4 may be connected with one of the electrodes of the storagecapacitor Cst, the drain electrode of the compensation thin filmtransistor T3, and the gate electrode of the driving thin filmtransistor T1. The first initialization thin film transistor T4 isturned on in response to a second scan signal Sn-1 transferred throughthe second scan line SLn-1 and may perform an initialization operationof initializing a voltage of the gate electrode of the driving thin filmtransistor T1 by transferring an initialization voltage VINT to the gateelectrode of the driving thin film transistor T1.

A gate electrode of the first emission control thin film transistor T5may be connected with the emission control line EL. A source electrodeof the first emission control thin film transistor T5 may be connectedwith the driving voltage line PL. A drain electrode of the firstemission control thin film transistor T5 is connected to the sourceelectrode of the driving thin film transistor T1 and the drain electrodeof the switching thin film transistor T2.

A gate electrode of the second emission control thin film transistor T6may be connected with the emission control line EL. A source electrodeof the second emission control thin film transistor T6 may be connectedwith the drain electrode of the driving thin film transistor T1 and thesource electrode of the compensation thin film transistor T3. A drainelectrode of the second emission control thin film transistor T6 may beelectrically connected with the pixel electrode of the organiclight-emitting diode OLED. The first emission control thin filmtransistor T5 and the second emission control thin film transistor T6are simultaneously turned on in response to an emission control signalEn transferred through the emission control line EL, and the first powervoltage ELVDD is transferred to the organic light-emitting diode OLEDand thus the driving current flows through the organic light-emittingdiode OLED.

A gate electrode of the second initialization thin film transistor T7may be connected to the second scan line SLn-1. A source electrode ofthe second initialization thin film transistor T7 may be connected withthe pixel electrode of the organic light-emitting diode OLED. A drainelectrode of the second initialization thin film transistor T7 may beconnected with the initialization voltage line VL. The secondinitialization thin film transistor T7 may be turned on in response to asecond scan signal Sn-1 transferred through the second scan line SLn-1to initialize the pixel electrode of the organic light-emitting diodeOLED.

Though FIG. 2B shows the case where the first initialization thin filmtransistor T4 and the second initialization thin film transistor T7 areconnected to the second scan line SLn-1, the invention is not limitedthereto. In another exemplary embodiment, the first initialization thinfilm transistor T4 may be connected to the second scan line SLn-1(e.g.,a previous scan line), and driven in response to the second scan signalSn-1, and the second initialization thin film transistor T7 may beconnected to a separate signal line (e.g. the next scan line) and drivenin response to a signal transferred through the relevant scan line.

The other electrode of the storage capacitor Cst may be connected withthe driving voltage line PL. One of the electrodes of the storagecapacitor Cst may be connected to the gate electrode of the driving thinfilm transistor T1, the drain electrode of the compensation thin filmtransistor T3, and the source electrode of the first initialization thinfilm transistor T4.

An opposite electrode (e.g. a cathode) of the organic light-emittingdiode OLED receives the second power voltage ELVSS (or a common powervoltage). The organic light-emitting diode OLED receives the drivingcurrent from the driving thin film transistor T1 and emits light.

The pixel circuit PC according to the invention is not limited to thenumber of thin film transistors and storage capacitors and the circuitdesign described with reference to FIGS. 2A and 2B. The number of thinfilm transistors and storage capacitors and the circuit design may bevariously changed.

The first and second thin film transistors T1 and T2 and the storagecapacitor Cst of the pixel circuit PC of each pixel P described withreference to FIGS. 2A and 2B are described in more detail with referenceto FIG. 3.

Referring to FIG. 3, a buffer layer 101 is arranged on the substrate100, and the driving thin film transistor T1, the switching thin filmtransistor T2, and the storage capacitor Cst are arranged over thebuffer layer 101.

The substrate 100 may include various materials such as glass, metal, orplastic. In an exemplary embodiment, for example, the substrate 100 mayinclude a flexible substrate including a polymer resin such aspolyethersulphone (“PES”), polyacrylate (“PAR”), polyetherimide (“PEI”),polyethylene naphthalate (“PEN”), polyethylene terephthalate (“PET”),polyphenylene sulfide (“PPS”), polyarylate, polyimide (“PI”),polycarbonate (“PC”), or cellulose acetate propionate (“CAP”).

In an exemplary embodiment, the buffer layer 101 including SiO_(x)and/or SiN_(x) configured to prevent impurities from penetrating may beprovided on the substrate 100.

The driving thin film transistor T1 includes a driving semiconductorlayer A1 and a driving gate electrode G1, and the switching thin filmtransistor T2 includes a switching semiconductor layer A2 and aswitching gate electrode G2. A first gate insulating layer 103 isarranged between the driving semiconductor layer A1 and the driving gateelectrode G1, and between the switching semiconductor layer A2 and theswitching gate electrode G2. In an exemplary embodiment, the first gateinsulating layer 103 may include an inorganic insulating material suchas SiO_(x), SiNx, and SiON.

In an exemplary embodiment, the driving semiconductor layer A1 or theswitching semiconductor layer A2 may include amorphous silicon orpolycrystalline silicon. In another exemplary embodiment, the drivingsemiconductor layer A1 or the switching semiconductor layer A2 mayinclude an oxide including at least one of In, Ga, Sn, Zr, V, Hf, Cd,Ge, Cr, Ti, and Zn.

The driving semiconductor layer A1 includes a driving channel regionoverlapping the driving gate electrode G1 and not doped with impurities,and a driving source region and a driving drain region respectivelydoped with impurities in two opposite sides of the driving channelregion. A driving source electrode S1 and a driving drain electrode D1may be respectively connected to the driving source region and thedriving drain region of the driving semiconductor layer A1.

The switching semiconductor layer A2 may include a switching channelregion overlapping the switching gate electrode G2 and not doped withimpurities, and a switching source region and a switching drain regionrespectively doped with impurities in two opposite sides of theswitching channel region. A switching source electrode S2 and aswitching drain electrode D2 may be respectively connected to theswitching source region and the switching drain region of the switchingsemiconductor layer A2.

In an exemplary embodiment, the driving gate electrode G1 or theswitching gate electrode G2 may include one of Mo, Al, Cu, and Ti andinclude a single layer or a multi-layer.

In an exemplary embodiment, the storage capacitor Cst may overlap thedriving thin film transistor T1 in the plan view. In this case, areas ofthe storage capacitor Cst and the driving thin film transistor T1 mayincrease and a high-quality image may be provided. For example, thedriving gate electrode G1 may serve as a first storage capacitor plateCE1 of the storage capacitor Cst. A second storage capacitor plate CE2may overlap the first storage capacitor plate CE1 with a second gateinsulating layer 105 therebetween. In an exemplary embodiment, thesecond gate insulating layer 105 may include an inorganic insulatingmaterial such as SiO_(x), SiN_(x), and SiON.

The driving thin film transistor T1, the switching thin film transistorT2, and the storage capacitor Cst may be covered by an interlayerinsulating layer 107.

In an exemplary embodiment, the interlayer insulating layer 107 mayinclude an inorganic material layer including SiON, SiO_(x) and/orSiN_(x).

A data line DL may be arranged on the interlayer insulating layer 107and may be connected with the switching semiconductor layer A2 of theswitching thin film transistor T2 through a contact hole that passesthrough the interlayer insulating layer 107. The data line DL may serveas the switching source electrode S2.

The driving source electrode S1, the driving drain electrode D1, theswitching source electrode S2, and the switching drain electrode D2 maybe arranged on the interlayer insulating layer 107. Each of theswitching source electrode S2 and the switching drain electrode D2 maybe connected with the switching semiconductor layer A2 through a contacthole that passes through the interlayer insulating layer 107. Each ofthe driving source electrode S1 and the driving drain electrode D1 maybe connected with the driving semiconductor layer A1 through a contacthole that passes through the interlayer insulating layer 107.

Meanwhile, the data line DL, the driving source electrode S1, thedriving drain electrode D1, the switching source electrode S2, and theswitching drain electrode D2 may be covered by an inorganic protectivelayer (not shown).

In an exemplary embodiment, the inorganic protective layer (not shown)may be a single layer or a multi-layer including SiN_(x) and SiO_(x).The inorganic protective layer (not shown) may prevent some wiringsexposed in the non-display area NDA (e.g., wirings simultaneously formedduring the same process as a manufacturing process of the data line DL)from being damaged by etchant used for patterning the pixel electrode310.

The driving voltage line PL may be arranged on a layer different from alayer of the data line DL. In the present specification, “A and B arereferred to as being arranged on different layers” means that at leastone insulating layer is arranged between A and B, and one of A and B isarranged under the at least one insulating layer and the other of A andB is arranged on the at least one insulating layer. A firstplanarization layer 109 may be arranged between the driving voltage linePL and the data line DL, and the driving voltage line PL may be coveredby a second planarization layer 111.

In an exemplary embodiment, the driving voltage line PL may be a singlelayer or a multi-layer including at least one of Al, Cu, Ti, and analloy thereof. In an exemplary embodiment, the driving voltage line PLmay include a three-layer structure of Ti/Al/Ti.

Though FIG. 3 shows a configuration in which the driving voltage line PLis arranged on the first planarization layer 109, the invention is notlimited thereto. In another exemplary embodiment, the driving voltageline PL may be connected to an additional voltage line (not shown)disposed on the same layer as a layer of the data line DL through athrough hole (not shown) defined in the second planarization layer 111and may reduce a resistance.

The first planarization layer 109 and the second planarization layer 111may include a single layer or a multi-layer.

The first planarization layer 109 and the second planarization layer 111may include an organic insulating material. In an exemplary embodiment,for example, the organic insulating material may include an imide-basedpolymer, a general-purpose polymer such as polymethylmethacrylate(“PMMA”) or polystyrene (“PS”), or polymer derivatives having aphenol-based group, an acryl-based polymer, an aryl ether-based polymer,an amide-based polymer, a fluorine-based polymer, a p-xylene-basedpolymer, and a vinyl alcohol-based polymer.

In an exemplary embodiment, the first planarization layer 109 and thesecond planarization layer 111 may include an inorganic insulatingmaterial. For example, the inorganic insulating material may includeSiON, SiO_(x), and SiN_(x).

An organic light-emitting diode OLED including the pixel electrode 310,an opposite electrode 330, and an intermediate layer 320 therebetweenmay be located on the second planarization layer 111. The intermediatelayer 320 may include an emission layer.

The pixel electrode 310 is connected with a connection wiring CLdisposed on the first planarization layer 109, and the connection wiringCL is connected with the driving drain electrode D1 of the driving thinfilm transistor T1.

The pixel electrode 310 may include a transparent electrode or areflective electrode.

In the case where the pixel electrode 310 includes a transparentelectrode, the pixel electrode 310 may include a transparent conductivelayer. In an exemplary embodiment, the transparent conductive layer mayinclude at least one of indium tin oxide (ITO), zinc oxide (IZO), zincoxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), andaluminum zinc oxide (AZO). In this case, in addition to the transparentconductive layer, the pixel electrode 310 may further include asemi-transmissive layer configured to improve light efficiency. In anexemplary embodiment, the semi-transmissive layer may include a thinlayer ranging from several nanometers (nm) to tens of nm and includingat least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, and Yb.

In the case where the pixel electrode 310 includes a reflectiveelectrode, the pixel electrode 310 may include a reflective layerincluding at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and acompound thereof, and a transparent conductive layer arranged on and/orunder the reflective layer. In an exemplary embodiment, the transparentconductive layer may include at least one of ITO, IZO, ZnO, In₂O₃, IGO,and AZO.

The invention is not limited thereto, and the pixel electrode 310 mayinclude various materials and have a single-layered or multi-layeredstructure. Various modifications may be made.

A pixel-defining layer 113 may be arranged on the pixel electrode 310.

The pixel-defining layer 113 defines a pixel by defining an opening thatexposes the pixel electrode 310. Also, the pixel-defining layer 113 mayprevent an arc from occurring at an end of the pixel electrode 310 byincreasing a distance between an edge of the pixel electrode 310 and theopposite electrode 330. In an exemplary embodiment, the pixel-defininglayer 113 may include an organic material such as polyimide orhexamethyldisiloxane (“HMDSO”).

The intermediate layer 320 may include a low-molecular weight or polymermaterial.

In the case where the intermediate layer 320 includes a low-molecularweight material, the intermediate layer 320 may have a structure inwhich a hole injection layer (“HIL”), a hole transport layer (“HTL”), anemission layer (“EML”), an electron transport layer (“ETL”), an electroninjection layer (“EIL”), etc. are stacked in a single or a compositeconfiguration. In an exemplary embodiment, the intermediate layer 320may include various organic materials such as copper phthalocyanine(“CuPc”), N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (“NPB”), andtris-8-hydroxyquinoline aluminum (“Alq₃”). The intermediate layer 320may be formed by various methods such as vacuum deposition.

In the case where the intermediate layer 320 includes a polymermaterial, the intermediate layer 320 may generally have a structureincluding an HTL and an EML. In this case, the HTL may includepoly(3,4-ethylenedioxythiophene) (“PEDOT”), and the EML may include apolymer material such as polyphenylene vinylene (“PPV”)-based materialand a polyfluorene-based material. The intermediate layer 320 may beformed by various methods such as screen printing, inkjet printing, andlaser induced thermal imaging.

The intermediate layer 320 may be provided as one body over a pluralityof pixel electrodes 310 or provided as a patterned layer correspondingto each of the plurality of pixel electrodes 310.

The opposite electrode 330 is arranged above the display area DA and maycover the display area DA. That is, the opposite electrode 330 may beprovided as one body over a plurality of organic light-emitting diodesOLED and may correspond to the plurality of pixel electrodes 310.

The opposite electrode 330 is electrically connected with the secondpower voltage line 20.

The opposite electrode 330 may include a transparent electrode or areflective electrode.

In the case where the opposite electrode 330 includes a transparentelectrode, the opposite electrode 330 may include at least one of Ag,Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg, and CaAg and may include athin layer having a thickness ranging from several nm to tens of nm, forexample.

In the case where the opposite electrode 330 includes a reflectiveelectrode, the opposite electrode 330 may include at least one of Ag,Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg, and CaAg, for example. Aconfiguration and a material of the opposite electrode 330 according tothe invention are not limited thereto and may be modified variously.

Since the organic light-emitting diode OLED may be easily damaged byexternal moisture or oxygen, the organic light-emitting diode OLED maybe protected by being covered by the thin-film encapsulation layer 400.

The thin-film encapsulation layer 400 may cover the display area DA andextend beyond the display area DA. The thin-film encapsulation layer 400may include at least one organic encapsulation layer and at least oneinorganic encapsulation layer. In an exemplary embodiment, the thin-filmencapsulation layer 400 may include a first inorganic encapsulationlayer 410, an organic encapsulation layer 420, and a second inorganicencapsulation layer 430.

The first inorganic encapsulation layer 410 may cover the oppositeelectrode 330 and include SiO_(x), SiN_(x), and/or SiON, in an exemplaryembodiment.

When needed, other layers such as a capping layer (not shown) may bearranged between the first inorganic encapsulation layer 410 and theopposite electrode 330.

For example, the capping layer (not shown) may include at least oneorganic or inorganic material among SiO₂, SiNx, ZnO₂, TiO₂, ZrO₂, ITO,IZO, Alq₃, CuPc, CBP, a-NPB, and ZiO₂ so as to improve light efficiency.In another exemplary embodiment, the capping layer (not shown) may allowplasmon resonance to occur in response to light emitted from the organiclight-emitting diode OLED. For example, the capping layer (not shown)may include nanoparticles.

Meanwhile, the capping layer (not shown) may prevent the organiclight-emitting diode OLED from being damaged by heat, plasma, etc.generated during a chemical vapor deposition (“CVD”) process or asputtering process for forming the thin-film encapsulation layer 400. Inan exemplary embodiment, for example, the capping layer (not shown) mayinclude an epoxy-based material including at least one of abisphenol-type epoxy resin, an epoxy-type butadiene resin, afluorine-type epoxy resin, and a novolac epoxy resin.

Also, when needed, a layer (not shown) including LiF may be arrangedbetween the first inorganic encapsulation layer 410 and the cappinglayer (not shown).

Since the first inorganic encapsulation layer 410 is disposed along astructure thereunder, a top surface of the first inorganic encapsulationlayer 410 is not flat. The organic encapsulation layer 420 planarizes atop surface thereof by covering the first inorganic encapsulation layer410. The top surface of the organic encapsulation layer 420 may beapproximately flat at a portion of the top surface that corresponds tothe display area DA.

In an exemplary embodiment, the organic encapsulation layer 420 mayinclude at least one of polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), polycarbonate (PC), polyimide, polyethylenesulfonate, polyoxymethylene, polyarylate, HMDSO.

In an exemplary embodiment, the second inorganic encapsulation layer 430may cover the organic encapsulation layer 420 and include SiO_(x),SiN_(x), and/or SiON. The second inorganic encapsulation layer 430 mayallow the organic encapsulation layer 420 not to be exposed to theoutside of the display device 1 (more specifically, the outside of thesecond dam unit 120) by that the second inorganic encapsulation layer430 directly contacts the first inorganic encapsulation layer 410 in anedge region of the display device 1 (e.g., the second dam unit 120).

Referring to FIG. 4, in an area IVA-IVB, the buffer layer 101, the firstgate insulating layer 103, and the second gate insulating layer 105 arearranged over the substrate 100, and a plurality of spider wirings SPLthat extend from a driving circuit unit (not shown) to the terminal unit30 (see FIG. 1) and that are spaced apart from each other is provided onthe second gate insulating layer 105.

In an exemplary embodiment, the plurality of wirings SPL may include thesame material as that of the second storage capacitor plate CE2 of thestorage capacitor Cst.

The interlayer insulating layer 107 covers the plurality of spiderwirings SPL, and the first power voltage line 10 and the second powervoltage line 20 are arranged on the interlayer insulating layer 107.

The first power voltage line 10 has a structure in which the firstconductive layer 10 a and the second conductive layer 10 b are stacked.The first conductive layer 10 a is connected to the second conductivelayer 10 b through a contact hole defined by the first planarizationlayer 109 that extends from the display unit 1DA (see FIG. 1) and thatis disposed between the first conductive layer 10 a and the secondconductive layer 10 b.

A plurality of second conductive layers 10 b is provided over the firstconductive layer 10 a, and a width W2 of the second conductive layer 10b is less than a width W1 of the first conductive layer 10 a.

The first conductive layer 10 a may include the same material as that ofthe data line DL or the driving source electrode S1 and the drivingdrain electrode D1 of the driving thin film transistor T1, or theswitching source electrode S2 and the switching drain electrode D2 ofthe switching thin film transistor T2.

The second conductive layer 10 b may include the same material as thatof the driving voltage line PL or the connection wiring CL. In anexemplary embodiment, the second conductive layer 10 b may have astacked structure of Ti/Al/Ti.

The second power voltage line 20 may have a structure in which the thirdconductive layer 20 a and the fourth conductive layer 20 b are stacked.The third conductive layer 20 a is connected to the fourth conductivelayer 20 b through a contact hole defined by the first planarizationlayer 109 that extends from the display unit 1DA (see FIG. 1) and thatis disposed between the third conductive layer 20 a and the fourthconductive layer 20 b. A width of the fourth conductive layer 20 b isgreater than the width W2 of the second conductive layer 10 b.

The third conductive layer 20 a may include the same material as that ofthe first conductive layer 10 a, and the fourth conductive layer 20 bmay include the same material as that of the second conductive layer 10b. In an exemplary embodiment, the fourth conductive layer 20 b may havea stacked structure of Ti/Al/Ti.

A third dam unit 130 is arranged at a location where the firstconductive layer 10 a overlaps the second conductive layer 10 b in theplan view. The third dam unit 130 may include a first layer 111 cincluding the same material as that of the second planarization layer111, and a second layer 113 c including the same material as that of thepixel-defining layer 113.

The first layer 111 c of the third dam unit 130 clads all of a topsurface and lateral surfaces of the second conductive layer 10 b toprevent the second conductive layer 10 b from contacting the oppositeelectrode 330.

The second layer 113 c of the third dam unit 130 is provided to clad atop surface and lateral surfaces of the first layer 111 c. While thesecond layer 113 c is patterned during a photolithography process, aprocess margin is secured and a height of the second layer 113 c isstably secured and the second conductive layer 10 b may be preventedfrom contacting the opposite electrode 330.

Though FIG. 4 shows the structure in which the third dam unit 130includes both the first layer 111 c and the second layer 113 c, theinvention is not limited thereto. The third dam unit 130 may include oneof the first layer 111 c and the second layer 113 c. In this case, theselected one layer may be provided higher, during a patterning processthat uses a half-tone mask, than a height of the second planarizationlayer 111 disposed in the display area DA.

The opposite electrode 330 that extends from the display unit 1DA (seeFIG. 1) covers a portion of the second layer 113 c of the third dam unit130. In a case that an area covered by the opposite electrode 330 islarge, it is advantageous in preventing deterioration of the organiclight-emitting diode OLED.

The first dam unit 110 and the second dam unit 120 spaced apart fromeach other are spaced apart from the third dam unit 130 in a directionfacing an end of the substrate 100. At least a portion of the first damunit 110 and the second dam unit 120 is arranged at a location where thethird conductive layer 20 a overlaps the fourth conductive layer 20 b inthe plan view.

The first dam unit 110 may include a first layer 111 a including thesame material as that of the second planarization layer 111, and asecond layer 113 a including the same material as that of thepixel-defining layer 113.

Though FIG. 4 shows that the first layer 111 a of the first dam unit 110clads both a top surface and lateral surfaces of the fourth conductivelayer 20 b, the invention is not limited thereto. The first layer 111 cof the third dam unit 130 may cover an end of the second conductivelayer 10 b to prevent deterioration of the second conductive layer 10 b.

The second dam unit 120 may include a first layer 111 b including thesame material as that of the second planarization layer 111, a secondlayer 113 b including the same material as that of the pixel-defininglayer 113, and a third layer 115 b including the same material as thatof a spacer (not shown).

The spacer (not shown) may protrude from the pixel-defining layer 113 ina direction of the thin-film encapsulation layer 400 and be configuredto prevent a defect due to a mask chopping, etc. during a manufacturingprocess. The spacer (not shown) may include the same material as that ofthe pixel-defining layer 113 and may be provided to have a heightdifferent from that of the pixel-defining layer 113 when forming thepixel-defining layer 113 by using a half-tone mask.

The organic encapsulation layer 420 may be prevented from flowing outover the second dam unit 120, and a mask chopping may be prevented byproviding the second dam unit 120 higher than the first dam unit 110.

The first dam unit 110 and the second dam unit 120 serve as dams thatblock flowing of the organic material into an edge of the substrate 100when forming the organic encapsulation layer 420 including the organicmaterial and constituting the thin-film encapsulation layer 400.Therefore, the first dam unit 110 and the second dam unit 120 mayprevent an edge tail of the organic encapsulation layer 420 from beingformed at the edge of the substrate 100.

However, a case where the organic encapsulation layer 420 flows to theedge of the substrate 100 beyond the first dam unit 110 and the seconddam unit 120 despite the arrangement of the first dam unit 110 and thesecond dam unit 120 may occur. For example, in the case where the seconddam unit 120 is arranged closer to the first dam unit 110 from the edgeof the substrate 100 so as to reduce an area recognized as a dead space(i.e., area which does not implement an image) from a viewer of theoutside, or the first dam unit 110 is arranged closer to the second damunit 120 so as to increase the display unit 1DA, an interval between thefirst dam unit 110 and the second dam unit 120 may be reduced and thusthe organic encapsulation layer 420 may flow beyond the second dam unit120 to the edge of the substrate 100.

In the present exemplary embodiment, since the third dam unit 130 isarranged between the display unit 1DA and the first dam unit 110 suchthat the third dam unit 130 overlaps the first power voltage line 10 inthe plan view, a reflow velocity of the organic material may be reduced.Therefore, the edge tail of the organic material may be effectivelyprevented.

Meanwhile, to reduce an area of the dead space, an alternative ofreducing widths of the first power voltage line 10 and the second powervoltage line 20 may be provided. However, if the widths of the firstpower voltage line 10 and the second power voltage line 20 are reduced,resistance values of the first power voltage line 10 and the secondpower voltage line 20 may increase.

In the present exemplary embodiment, since the first power voltage line10 has a two-story layer in which the first conductive layer 10 a andthe second conductive layer 10 b are stacked, and the second powervoltage line 20 has a two-story layer in which the third conductivelayer 20 a and the fourth conductive layer 20 b are stacked, theresistance values thereof may be reduced, a voltage drop inside thefirst power voltage line 10 or the second power voltage line 20 iseffectively prevented, and thus a high-quality image may be provided.

FIG. 5 is a cross-sectional view of a display device 2 according toanother exemplary embodiment. In FIG. 5, since same reference numeralsas those of FIG. 4 represent same members, repeated descriptions thereofare omitted and differences are mainly described.

Referring to FIG. 5, the buffer layer 101 and the first gate insulatinglayer 103 are arranged on the substrate 100. A plurality of wirings SPLthat extend from a driving circuit unit (not shown) toward the terminalunit 30 (see FIG. 1) and that are spaced apart from each other isarranged on the first gate insulating layer 103.

The plurality of wirings SPL is covered by the second gate insulatinglayer 105 and the interlayer insulating layer 107, and the first powervoltage line 10 and the second power voltage line 20 are arranged on theinterlayer insulating layer 107.

The present exemplary embodiment is different from the above exemplaryembodiment in that the plurality of wiring SPL is arranged on the firstgate insulating layer 103 instead of the second gate insulating layer105.

The driving circuit unit (not shown) may include a gate driving circuitunit configured to transfer a driving gate signal to a pixel, and a datadriving circuit unit configured to transfer a data signal to a pixel.The driving circuit unit (not shown) may be arranged between the displayunit 1DA (see FIG. 1) and the first dam unit 110. A wiring that extendsfrom the driving circuit unit (not shown) may be connected with theterminal unit 30 through the wiring SPL.

In the present exemplary embodiment, the wiring SPL may include the samematerial as that of the first storage capacitor plate CE1 of the storagecapacitor Cst which serves as the driving gate electrode G1 of thedriving thin film transistor T1, or the switching gate electrode G2 ofthe switching thin film transistor T2.

Compared to the above exemplary embodiment shown in FIG. 4, in thepresent exemplary embodiment, by adding the second gate insulating layer105 to the insulating spaces between the wirings SPL and the firstconductive layer 10 a of the first power voltage line 10 and between thewirings SPL and the third conductive layer 20 a of the second powervoltage line 20, mutual interference of electric signals between theconductive layers may be reduced. In an exemplary embodiment, thewirings SPL may be disposed in a direction that crosses the firstconductive layer 10 a and the third conductive layer 20 a.

FIG. 6 is a cross-sectional view of a display device 3 according tostill another exemplary embodiment. In FIG. 6, since same referencenumerals as those of FIG. 4 represent same members, repeateddescriptions thereof are omitted and differences are mainly described.

Referring to FIG. 6, the buffer layer 101, the first gate insulatinglayer 103 and the second gate insulating layer 105 are arranged on thesubstrate 100. A plurality of wirings SPL that extend from a drivingcircuit unit (not shown) toward the terminal unit 30 (see FIG. 1) andthat are spaced apart from each other is arranged on the second gateinsulating layer 105.

The plurality of wirings SPL is covered by the interlayer insulatinglayer 107, and the first power voltage line 10 and the second powervoltage line 20 are arranged on the interlayer insulating layer 107.

The first power voltage line 10 has a structure in which the firstconductive layer 10 a and the second conductive layer 10 b are stacked.Though a configuration in which a plurality of second conductive layers10 b is provided over the first conductive layer 10 a is the same as theabove exemplary embodiment shown in FIG. 4, the present exemplaryembodiment is different from the above exemplary embodiment in thenumber of second conductive layers 10 b arranged in an area serving asthe third dam unit 130. One second conductive layer 10 b is arranged inthe area serving as the third dam unit 130 in the above exemplaryembodiment shown in FIG. 4. In contrast, two second conductive layers 10b are arranged in the present exemplary embodiment. That is, in thepresent exemplary embodiment, the third dam unit 130 includes a firstsub-dam unit 130-1 and a second sub-dam unit 130-2.

Widths W21 and W22 of the second conductive layers 10 b are less than awidth W1 of the first conductive layer 10 a, respectively.

A first layer 111 c-1 of the first sub-dam unit 130-1 may prevent thesecond conductive layer 10 b from contacting the opposite electrode 330by cladding all of a top surface and lateral surfaces of the secondconductive layer 10 b.

A second layer 113 c-1 of the first sub-dam unit 130-1 is provided toclad a top surface and lateral surfaces of the first layer 111 c-1.While the second layer 113 c-1 is patterned during a photolithographyprocess, a process margin is secured and a height of the second layer113 c-1 is stably secured so that the second conductive layer 10 b maybe effectively prevented from contacting the opposite electrode 330.

A first layer 111 c-2 of the second sub-dam unit 130-2 may prevent thesecond conductive layer 10 b from contacting the opposite electrode 330by cladding all of a top surface and lateral surfaces of the secondconductive layer 10 b.

The second layer 113 c-2 of the second sub-dam unit 130-2 is provided toclad a top surface and lateral surfaces of the first layer 111 c-2.While the second layer 113 c-2 is patterned during a photolithographyprocess, a process margin is secured and a height of the second layer113 c-2 is stably secured so that the second conductive layer 10 b maybe effectively prevented from contacting the opposite electrode 330.

The present exemplary embodiment may prevent an area of the dead spacefrom increasing by dividing the second conductive layer 10 b andconfiguring the third dam unit 130 with a plurality of sub-dam units,and thus even more reducing a reflow velocity of the organic material.

Though FIG. 6 shows two sub-dam units that constitute the third dam unit130 are provided, the invention is not limited thereto and the third damunit 130 may include three or more sub-dam units, in another exemplaryembodiment.

FIGS. 7 and 8 are cross-sectional views of exemplary embodiments inwhich step differences are provided in a top surface of the third damunit.

Referring to FIG. 7, step differences are provided in a second layer 113c-3 arranged on a first layer 111 c-3 of a third sub-dam unit 130-3, andthus the second layer 113 c-3 is divided into two parts.

The first layer 111 c-3 may include the same material as that of thesecond planarization layer 111 (see FIGS. 4, 5, and 6) as describedabove, and though not shown in FIG. 7, the first layer 111 c-3 clads atop surface and lateral surfaces of the second conductive layer 10 b(see FIGS. 4, 5, and 6) of the first power voltage line 10 (see FIGS. 4,5, and 6).

As described above, the second layer 113 c-3 includes the same materialas that of the pixel-defining layer 113 (see FIGS. 4, 5, and 6), and thesecond layer 113 c-3 is divided into two parts by providing the secondlayers 113 c-3 on one first layer 111 c-3 such that the second layers113 c-3 have a step difference. The step difference may be provided byusing, for example, a photolithography process.

Though FIG. 7 shows the case where the step differences of the secondlayer 113 c-3 divided into two parts are the same, the invention is notlimited thereto. Shapes of the step differences may be variouslychanged.

Also, though FIG. 7 shows a structure in which step differences areprovided such that a portion of a top surface of the first layer 111 c-3is exposed, the invention is not limited thereto. In another exemplaryembodiment, the step difference may be provided such that the topsurface of the first layer 111 c-3 is not exposed and a portion of thesecond layer 113 c-3 remains on the top surface of the first layer 111c-3.

The opposite electrode 330 covers a portion of the second layer 113 c-3,and the first inorganic encapsulation layer 410 is arranged on theopposite electrode 330.

Like the above exemplary embodiments, the first inorganic encapsulationlayer 410 may entirely cover the third sub-dam unit 130-3 and extend toan end of the second dam unit 120 (see FIGS. 4, 5, and 6).

When forming the organic encapsulation layer 420 including the organicmaterial (see FIGS. 4, 5, and 6) after forming the first inorganicencapsulation layer 410, a reflow velocity of the organic material maybe reduced due to the step differences provided in the second layer 113c-3. Therefore, an edge tail of the organic material may be effectivelyprevented from forming. Therefore, an area of the dead space may beeffectively prevented from increasing.

Referring to FIG. 8, step differences are provided in a second layer 113c-4 arranged on a first layer 111 c-4 of a fourth sub-dam unit 130-4,and thus the second layer 113 c-4 is divided into four parts.

Compared to FIG. 7, the exemplary embodiment of FIG. 8 is different fromFIG. 7 in the number of divided parts of the second layer 113 c-4, andthe rest of the structure is the same.

A reflow velocity of the organic material may be even more reduced byforming a greater number of step differences in the second layer 113c-4. Therefore, an edge tail of the organic material may be effectivelyprevented. Therefore, an area of the dead space may be prevented fromincreasing.

Even though FIGS. 7 and 8 show the exemplary embodiment in which thestep differences are provided in the third dam units 130-3 and 130-4,the present exemplary embodiment may be applicable to the first dam unit110 (see FIGS. 4, 5, and 6) and the second dam unit 120 (see FIGS. 4, 5,and 6). For example, a reflow velocity of the organic material may beeven more reduced by also providing step differences in the second layer113 a (see FIGS. 4, 5, and 6), which is a top layer of the first damunit 110 (see FIGS. 4, 5, and 6), and in the third layer 115 b (seeFIGS. 4, 5, and 6), which is a top layer of the second dam unit 120 (seeFIGS. 4, 5, and 6), in another exemplary embodiment.

According to exemplary embodiments, the dead space may be reduced byarranging the third dam unit between the display unit and the first damunit such that the third dam unit overlaps the first power voltage lineand thus reducing a reflow velocity of an organic material. Also, adisplay device that provides a high-quality image through a powervoltage line where voltage drop is reduced may be implemented. However,the scope of the invention is not limited by this effect.

Although the disclosure has been described with reference to theexemplary embodiments illustrated in the drawings, this is merelyprovided as an example and it will be understood by those of ordinaryskill in the art that various changes in form and details andequivalents thereof may be made therein without departing from thespirit and scope of the disclosure as defined by the following claims.

What is claimed is:
 1. A display device comprising: a substrate; adisplay area located over the substrate and which includes a pluralityof pixels; a non-display area arranged outside the display area; a firstpower voltage line which corresponds to one side of the display area inthe non-display area and includes a first conductive layer and a secondconductive layer arranged over the first conductive layer; a secondpower voltage line spaced apart from the first power voltage line in thenon-display area; a first dam unit which surrounds the display area andoverlaps the second power voltage line in a plan view; a second dam unitarranged outside the first dam unit; and a third dam unit arrangedbetween the display area and the first dam unit and which overlaps thefirst conductive layer and the second conductive layer of the firstpower voltage line in the plan view.
 2. The display device of claim 1,further comprising: a first planarization layer arranged in the displayarea and the non-display area; a second planarization layer arrangedover the first planarization layer; and a pixel-defining layer arrangedover the second planarization layer, wherein the third dam unit includesat least one of the pixel-defining layer and the second planarizationlayer.
 3. The display device of claim 2, wherein a step difference isprovided in a top surface of an upper layer among the pixel-defininglayer and the second planarization layer.
 4. The display device of claim2, wherein a bottom layer among the pixel-defining layer and the secondplanarization layer clads an end of the second conductive layer.
 5. Thedisplay device of claim 4, wherein an upper layer among thepixel-defining layer and the second planarization layer clads an end ofthe bottom layer.
 6. The display device of claim 1, wherein each of thepixels includes a first electrode, an emission layer arranged on thefirst electrode, and a second electrode arranged on the emission layer,and the second electrode is arranged in common in the plurality ofpixels and extends to the non-display area to cover a portion of thethird dam unit.
 7. The display device of claim 1, further comprising athin-film encapsulation layer which includes a first inorganicencapsulation layer that covers the display area, an organicencapsulation layer on the first inorganic encapsulation layer, and asecond inorganic encapsulation layer on the organic encapsulation layer,wherein the thin-film encapsulation layer covers the third dam unit. 8.The display device of claim 7, wherein the first inorganic encapsulationlayer directly contacts the second inorganic encapsulation layer at theoutside of the second dam unit.
 9. The display device of claim 1,wherein a width of the second conductive layer is less than a width ofthe first conductive layer.
 10. The display device of claim 9, whereinthe second conductive layer is provided in plural and the secondconductive layers are spaced apart from each other over the firstconductive layer, and the third dam unit clads, with an insulatinglayer, each of the plurality of second conductive layers spaced apartfrom each other to constitute a plurality of sub-dam units.
 11. Thedisplay device of claim 1, wherein an insulating layer is arrangedbetween the first conductive layer and the second conductive layer, andthe first conductive layer is electrically connected with the secondconductive layer through a contact hole defined by the insulating layer.12. The display device of claim 1, wherein the second power voltage lineincludes a third conductive layer and a fourth conductive layer arrangedon the third conductive layer.
 13. The display device of claim 12,wherein an insulating layer is arranged between the third conductivelayer and the fourth conductive layer, and the third conductive layer iselectrically connected with the fourth conductive layer through acontact hole defined by the insulating layer.
 14. The display device ofclaim 12, wherein the first dam unit or the second dam unit clads an endof the fourth conductive layer.
 15. The display device of claim 12,wherein the third conductive layer includes a same material as the firstconductive layer, and the fourth conductive layer includes a samematerial as the second conductive layer.
 16. The display device of claim12, wherein a width of the fourth conductive layer is greater than awidth of the second conductive layer.
 17. The display device of claim12, wherein a plurality of wirings spaced apart from each other isdisposed between the substrate and the first conductive layer andbetween the substrate and the third conductive layer in a direction thatcrosses the first conductive layer and the third conductive layer. 18.The display device of claim 1, further comprising: a first planarizationlayer arranged in the display area and the non-display area; a secondplanarization layer arranged over the first planarization layer; and apixel-defining layer arranged over the second planarization layer,wherein the first dam unit and the second dam unit include at least oneof the pixel-defining layer and the second planarization layer.
 19. Thedisplay device of claim 1, wherein a height of the second dam unit isgreater than a height of the first dam unit.
 20. A display devicecomprising: a display area including a plurality of display elements; anon-display area arranged outside the display area; a terminal unitarranged at an end of the non-display area; a first power voltage linearranged between the display area and the terminal unit and whichincludes a first conductive layer and a second conductive layer arrangedon the first conductive layer; a second power voltage line spaced apartfrom the first power voltage line and which includes a third conductivelayer and a fourth conductive layer arranged on the third conductivelayer; a first dam unit which overlaps the second power voltage line ina plan view; a second dam unit arranged outside the first dam unit; athird dam unit arranged between the display area and the first dam unitand which overlaps the first conductive layer and the second conductivelayer of the first power voltage line in the plan view; and a thin-filmencapsulation layer which includes a first inorganic encapsulation layercovering the display area and the third dam unit, an organicencapsulation layer on the first inorganic encapsulation layer, and asecond inorganic encapsulation layer on the organic encapsulation layer.21. The display device of claim 20, further comprising: a firstplanarization layer arranged in the display area and the non-displayarea; a second planarization layer arranged over the first planarizationlayer; and a pixel-defining layer arranged over the second planarizationlayer, wherein the third dam unit includes at least one of thepixel-defining layer and the second planarization layer.
 22. The displaydevice of claim 20, wherein a plurality of wirings spaced apart fromeach other is disposed between the substrate and the first conductivelayer and between the substrate and the third conductive layer in adirection that faces the terminal unit.
 23. The display device of claim20, wherein the third conductive layer includes a same material as thefirst conductive layer, and the fourth conductive layer includes a samematerial as the second conductive layer.
 24. The display device of claim20, further comprising a thin film transistor, wherein the first tothird dam units include an insulating layer pattern including a samematerial as an insulating layer arranged between the thin filmtransistor and the display element.